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Theoretical investigation of stark effect on shallow donor binding energy in InGaN spherical QD-QW

Identifieur interne : 000331 ( Main/Repository ); précédent : 000330; suivant : 000332

Theoretical investigation of stark effect on shallow donor binding energy in InGaN spherical QD-QW

Auteurs : RBID : Pascal:13-0211360

Descripteurs français

Pascal (Inist)
- Effet Stark, Niveau peu profond, Centre donneur, Energie liaison, Effet champ électrique, Impureté, Etat fondamental, Etat défaut, Méthode variationnelle, Modèle masse effective, Gallium Indium Nitrure Mixte, Particule sphérique, Point quantique, Couche mince, InGaN, GaN.

English descriptors

KwdEn :
- Binding energy, Defect states, Donor center, Effective mass model, Electric field effects, Gallium Indium Nitrides Mixed, Ground states, Impurities, Quantum dots, Shallow level, Spherical particle, Stark effect, Thin films, Variational methods.

Abstract

In this paper, a simultaneous study of electric field and impurity's position effects on the ground-state shallow-donor binding energy in GaN |InGaN| GaN spherical quantum dot-quantum well (SQD-QW) as a function of the ratio of the inner and the outer radius is reported. The calculations are investigated using variational approach within the framework of the effective-mass approximation. The numerical results show that: (i) the binding energy is strongly affected by the external electric field and the SQD-QW dimension, (ii) a critical value of spherical system's radius is obtained constituting the limit of three dimension confinement and spherical thin layer confinement and (iii) the Stark shift increases with increasing electric field and it is more pronounced around the position of the impurity corresponding to the binding energy maxima than in the spherical layer extremities.

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<author><name sortKey="El Ghazi, Haddou" uniqKey="El Ghazi H">Haddou El Ghazi</name>
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<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Mathématiques spéciales, CPGE Kénitra, Chakib Arsalane Street</s1>
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<author><name sortKey="Jorio, Anouar" uniqKey="Jorio A">Anouar Jorio</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Solid State Physics Laboratory, Faculty of Science, Dhar EL Mehrez, BP</s1>
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<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<wicri:noRegion>1796 Fes-Atlas</wicri:noRegion>
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</author>
<author><name sortKey="Zorkani, Izeddine" uniqKey="Zorkani I">Izeddine Zorkani</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Solid State Physics Laboratory, Faculty of Science, Dhar EL Mehrez, BP</s1>
<s2>1796 Fes-Atlas</s2>
<s3>MAR</s3>
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<term>Defect states</term>
<term>Donor center</term>
<term>Effective mass model</term>
<term>Electric field effects</term>
<term>Gallium Indium Nitrides Mixed</term>
<term>Ground states</term>
<term>Impurities</term>
<term>Quantum dots</term>
<term>Shallow level</term>
<term>Spherical particle</term>
<term>Stark effect</term>
<term>Thin films</term>
<term>Variational methods</term>
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<term>Niveau peu profond</term>
<term>Centre donneur</term>
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<term>Effet champ électrique</term>
<term>Impureté</term>
<term>Etat fondamental</term>
<term>Etat défaut</term>
<term>Méthode variationnelle</term>
<term>Modèle masse effective</term>
<term>Gallium Indium Nitrure Mixte</term>
<term>Particule sphérique</term>
<term>Point quantique</term>
<term>Couche mince</term>
<term>InGaN</term>
<term>GaN</term>
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<front><div type="abstract" xml:lang="en">In this paper, a simultaneous study of electric field and impurity's position effects on the ground-state shallow-donor binding energy in GaN |InGaN| GaN spherical quantum dot-quantum well (SQD-QW) as a function of the ratio of the inner and the outer radius is reported. The calculations are investigated using variational approach within the framework of the effective-mass approximation. The numerical results show that: (i) the binding energy is strongly affected by the external electric field and the SQD-QW dimension, (ii) a critical value of spherical system's radius is obtained constituting the limit of three dimension confinement and spherical thin layer confinement and (iii) the Stark shift increases with increasing electric field and it is more pronounced around the position of the impurity corresponding to the binding energy maxima than in the spherical layer extremities.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Theoretical investigation of stark effect on shallow donor binding energy in InGaN spherical QD-QW</s1>
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<fA11 i1="01" i2="1"><s1>EL GHAZI (Haddou)</s1>
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<fA11 i1="03" i2="1"><s1>ZORKANI (Izeddine)</s1>
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<fA14 i1="01"><s1>Solid State Physics Laboratory, Faculty of Science, Dhar EL Mehrez, BP</s1>
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<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>In this paper, a simultaneous study of electric field and impurity's position effects on the ground-state shallow-donor binding energy in GaN |InGaN| GaN spherical quantum dot-quantum well (SQD-QW) as a function of the ratio of the inner and the outer radius is reported. The calculations are investigated using variational approach within the framework of the effective-mass approximation. The numerical results show that: (i) the binding energy is strongly affected by the external electric field and the SQD-QW dimension, (ii) a critical value of spherical system's radius is obtained constituting the limit of three dimension confinement and spherical thin layer confinement and (iii) the Stark shift increases with increasing electric field and it is more pronounced around the position of the impurity corresponding to the binding energy maxima than in the spherical layer extremities.</s0>
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<s5>04</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>09</s5>
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<fC03 i1="11" i2="X" l="ENG"><s0>Gallium Indium Nitrides Mixed</s0>
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<s5>19</s5>
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<fC03 i1="15" i2="3" l="FRE"><s0>InGaN</s0>
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<s4>INC</s4>
<s5>53</s5>
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<fN21><s1>196</s1>
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Theoretical investigation of stark effect on shallow donor binding energy in InGaN spherical QD-QW

Theoretical investigation of stark effect on shallow donor binding energy in InGaN spherical QD-QW

Descripteurs français

English descriptors

Abstract

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